BSZ096N10LS5ATMA1 vs BSZ065N03LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ096N10LS5ATMA1 sa pamamagitan ng Infineon at BSZ065N03LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ096N10LS5ATMA1 - 100V 9.6mΩ OptiMOS 5 N-Channel MOSFET | Infineon
BSZ096N10LS5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSZ096N10LS5ATMA1 | BSZ065N03LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS max) | 100 V | — |
| Gate-Source Voltage (VGS max) | 20 V (typical) | — |
| Continuous Drain Current (ID, TC=25 °C) | 40 A | — |
| Maximum Silicon Drain Current (ID max) | 62 A | — |
| Pulse Drain Current (ID,pulse) | 160 A | — |
| On-Resistance RDS(on) max | 9.6 mΩ at VGS=10 V | — |
| Total Power Dissipation (Ptot, TC=25 °C) | 69 W | — |
| Gate Threshold Voltage VGS(th) | Logic-level (low single-volt range) | — |
| Diode Continuous Forward Current (IS) | 40 A (TC=25 °C) | — |
| Diode Forward Voltage (VSD) | 0.85 V typ, 1.2 V max at IF=20 A | — |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (junction) | -55C to +150C (junction) |
| Technology | OptiMOS 5 trench MOSFET | Trench MOSFET (OptiMOS) |
| Gate Drive | Logic-level compatible | — |
| ESD Protection | Yes (gate-integrated) | — |
| Tindminan RoHS | Compliant | Compliant |
| Packaging Code | ATMA1 (tape and reel) | — |
| Series | — | OptiMOS 30V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 12 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 26 W |
| Packhaging / Kaso | — | PG-TSDSON-8-FL (S308) |
| Configuration | — | Single N-Channel |
| Level ng MSL | — | 1 |
| Gate Drive (typical) | — | 4.5 V |