BSZ15DC02KDHXTMA1 vs IRF4905SPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ15DC02KDHXTMA1 sa pamamagitan ng Infineon at IRF4905SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSZ15DC02KDHXTMA1 | IRF4905SPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSZ15DC02KDHXTMA1 | — |
| Uri ng Transistor | N-Channel + P-Channel (complementary pair) | — |
| Technology | OptiMOS™2 (N-ch) + OptiMOS™-P2 (P-ch) | HEXFET, planar cell |
| Drain-to-Source Voltage (VDS) Max | 20 V | — |
| N-Channel Continuous Drain Current (ID) | 5.1 A | — |
| P-Channel Continuous Drain Current (ID) | 3.2 A | — |
| N-Channel RDS(on) Max | [DATA_NEEDED: N-ch RDS(on) value in mohm] | — |
| P-Channel RDS(on) Max | 55 mOhm (per Infineon part summary) | — |
| Gate Drive Level | Super Logic level, 2.5 V rated | — |
| Configuration | Common drain (back-to-back source pair) | — |
| Total Package Power Dissipation (PD) | 2.5 W @ 25 C (per DigiKey listing) | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55 C to +150 C |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm, 8-pin with exposed pad) | D2PAK (TO-263) surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Avalanche Rated | Yes | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Lead-Free / RoHS | Yes / RoHS compliant | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID, Tc=25C) | — | -42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max) | — | 20 mOhm @ VGS = -10V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max, typical +/-20V] |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | — | 170 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC, typical 0.6 C/W] |
| Total Gate Charge (Qg) | — | 120 nC (typical per Mouser listing) |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Tindminan RoHS | — | Compliant (PBF suffix indicates Pb-free) |
| Qualification | — | JEDEC standard |