DS1249AB-70IND+ vs DS1249AB-70IND Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng DS1249AB-70IND+ sa pamamagitan ng Analog Devices at DS1249AB-70IND sa pamamagitan ng Analog Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Analog Devices
DS1249AB-70IND+ DS1249AB-70IND+ - 2Mb NVSRAM 32-EDIP 70ns | Maxim Integrated

DS1249AB-70IND+ - 2Mb NVSRAM 32-EDIP 70ns | Maxim Integrated

DS1249AB-70IND+ ✓ Nakahanda
Analog Devices
DS1249AB-70IND DS1249AB-70IND - 2Mb NVSRAM, 70ns, 32-EDIP | Analog Devices

DS1249AB-70IND - 2Mb NVSRAM, 70ns, 32-EDIP | Analog Devices

DS1249AB-70IND ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro DS1249AB-70IND+ DS1249AB-70IND
Brand Analog Devices Analog Devices
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory NVSRAM (Non-Volatile SRAM) NVSRAM (Non-Volatile SRAM)
Laki ng Memory 2 Mbit (2,097,152 bits) 2 Mbit (262,144 x 8)
Organisasyon 256K x 8 262,144 words x 8 bits
Interface Parallel Parallel
Access Time 70 ns (max) 70 ns
Write Cycle Time 70 ns (word write, no write delay) —
Data Retention 10 years (typical, with internal lithium cell) 10 years minimum (no external power)
Supply Voltage (VCC) 5 V ±10% (typical 4.5 V to 5.5 V) —
Hanay ng Temperature na Operasyon -40 °C to +85 °C (industrial, -IND suffix) —
Packhaging / Kaso 32-EDIP (Extended DIP, 0.600 in / 15.24 mm) —
Uri ng Pagpapasok Through-Hole (DIP module with socket) Through-Hole (DIP module)
Bilang ng Pin 32 —
Built-in Battery Yes (internal lithium energy source) —
Write Protection Automatic on VCC out-of-tolerance Automatic on VCC out-of-tolerance
Endurance Unlimited SRAM read/write cycles —
Tindminan RoHS Compliant (per Maxim Integrated product page) Contains lithium - subject to special handling rules
Shipping Regulation UN3481 PI970 (lithium battery - air/sea per IATA) —
Lead-Free / Halogen-Free Lead-free (RoHS compliant) —
Write Cycle Endurance — Unlimited writes
Backup Mechanism — Internal lithium energy cell + VCC monitor
Operating Voltage (VCC) — 5 V (typical NVSRAM range)
Temperature na Operasyon — -40C to +85C (industrial, -IND suffix)
Packhaging — 32-EDIP (Extended DIP module, 0.600 inch / 15.24 mm)
Technology — Low-power CMOS

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