EP3C40F780C7 vs EP3C40F780C6N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3C40F780C7 sa pamamagitan ng Intel at EP3C40F780C6N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3C40F780C7 | EP3C40F780C6N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Family | Cyclone III | Cyclone III |
| Logic Elements (LE) | 39,600 | — |
| Number of Logic Cells | 39,600 | — |
| Total Memory Bits | 1,161,216 bits | — |
| Embedded 18x18 Multipliers | 126 | — |
| Number of PLLs | 4 | — |
| User I/O Count | 535 | — |
| I/O Banks | 8 | — |
| Packhaging | 780-ball FBGA (F780) | 780-ball FBGA (FineLine BGA) |
| Package Dimensions | 29 x 29 mm | 29 x 29 mm |
| Ball Pitch | 1.0 mm | 1.0 mm |
| Core Voltage (VCCINT) | 1.2 V | — |
| I/O Voltage (VCCIO) | 1.2 V to 3.3 V | — |
| Temperature na Operasyon | 0C to +85C (Commercial) | 0C to +85C (commercial) |
| Speed Grade | C7 | 6 (commercial) |
| Process Technology | 60 nm TSMC low-power CMOS | 60 nm CMOS |
| Configuration | Active Serial / Passive Parallel (JTAG) | — |
| Level ng MSL | 3 (168 hours) | — |
| Tindminan RoHS | Compliant | Compliant |
| Logic Elements | — | 39,600 |
| Embedded Memory Bits | — | 1,161,216 |
| Embedded Memory (Kbytes) | — | 113 |
| M9K Memory Blocks | — | 126 |
| Logic Array Blocks (LABs) | — | 4,065 |
| Maximum User I/O Pins | — | 535 |
| PLLs | — | 4 |
| Core Voltage | — | 1.2 V |
| Package Height | — | 2.6 mm |
| Uri ng Pagpapasok | — | Surface Mount (FBGA) |
| Lead Free | — | Yes |
| Configuration Method | — | SRAM, JTAG via USB-Blaster |