EP3SE260F1517I3 vs EP3SE260F1517C3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517I3 sa pamamagitan ng Intel at EP3SE260F1517C3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517I3 | EP3SE260F1517C3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Huling Pagbili |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 255,000 | 254,400 |
| Embedded Memory (bits) | 16,672,768 | — |
| Logic Array Blocks (LABs) | 10,200 | — |
| Maximum User I/Os | 976 | — |
| Packhaging | 1517-BBGA, FCBGA | 1517-BBGA (FCBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Temperature Grade | Industrial | — |
| Junction Temperature Range | -40C to +125C | — |
| Core Voltage | 1.0 V typical | — |
| Process Technology | 65 nm CMOS | 65 nm TSMC low-power CMOS |
| Maximum Core Frequency | 717 MHz | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, HSTL, SSTL | — |
| Tindminan RoHS | Compliant | Compliant |
| Configuration | SRAM-based, volatile (requires external configuration device) | — |
| Embedded Memory | — | 16,672,768 bits (16.7 Mbits) |
| User I/Os | — | 976 |
| DSP Blocks (18x18 Multipliers) | — | 816 |
| M9K Memory Blocks | — | 1,040 |
| Maximum Transceiver Data Rate | — | 600 Mbps |
| PLLs | — | 4 |
| Global Clock Networks | — | 16 |
| Speed Grade | — | C3 (commercial) |
| Temperature ng Junction na Operasyon | — | 0 C to +85 C (commercial) |
| External Memory Interfaces | — | DDR3, DDR2, QDRII+, RLDRAM2 |