EP3SE260F1517I3G vs EP3SE260F1517I3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517I3G sa pamamagitan ng Intel at EP3SE260F1517I3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517I3G | EP3SE260F1517I3 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory Bits | 16,672,768 | — |
| Maximum Operating Frequency | 500 MHz | — |
| Core Voltage | 1.1 V | 1.0 V typical |
| User I/O Count | 976 | — |
| Packhaging | 1517-ball FC-FBGA (Flip-Chip BGA) | 1517-BBGA, FCBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Node | 65 nm | — |
| Embedded Multipliers | 768 (18x18) | — |
| PLL Count | 12 | — |
| Transceiver Data Rate | Up to 6.375 Gbps | — |
| Operating Temperature Grade | Industrial (-40C to +100C) | Industrial |
| Lead-Free / RoHS | Yes (RoHS compliant per DigiKey listing) | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Embedded Memory (bits) | — | 16,672,768 |
| Logic Array Blocks (LABs) | — | 10,200 |
| Maximum User I/Os | — | 976 |
| Junction Temperature Range | — | -40C to +125C |
| Process Technology | — | 65 nm CMOS |
| Maximum Core Frequency | — | 717 MHz |
| I/O Standards Supported | — | LVDS, LVTTL, LVCMOS, HSTL, SSTL |
| Tindminan RoHS | — | Compliant |
| Configuration | — | SRAM-based, volatile (requires external configuration device) |