EP3SE260H780I4LG vs EP3SE260H780C4L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260H780I4LG sa pamamagitan ng Intel at EP3SE260H780C4L sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260H780I4LG | EP3SE260H780C4L |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Series | Stratix III Enhanced | — |
| Family | EP3SE260 | Stratix III E |
| Logic Elements | 255,000 LE | 255,000 |
| Adaptive Logic Modules (ALMs) | 102,000 ALM | — |
| Embedded Memory | 15.90 Mbit | — |
| DSP Blocks | 304 | — |
| 18x18 Multipliers | 840 | — |
| User I/O | 488 | — |
| PLLs | 8 (4 fractional + 4 general-purpose) | — |
| Speed Grade | -4 | C4 (middle/slow tier) |
| Temperature Grade | Industrial (I) | — |
| Packhaging | 780-ball FineLine BGA (HBGA) | 780-ball FCBGA (HBGA 33x33 mm) |
| Temperature na Operasyon | -40C to +100C | — |
| Process Technology | 65 nm low-power CMOS | — |
| Configuration Method | JTAG / Passive Serial / Fast Passive Parallel / Active Serial | — |
| LABs/CLBs | — | 10,200 |
| Total RAM Bits | — | 16,672,768 (16.7 Mbit) |
| User I/O Count | — | 488 |
| Core Voltage | — | 0.9 V (nominal) |
| Temperature ng Junction na Operasyon | — | 0C to +85C (commercial) |
| Uri ng Pagpapasok | — | Surface Mount (flip-chip BGA) |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | — | Compliant (lead-free per datasheet) |
| Transceivers | — | Up to 24 multi-gigabit transceivers |
| Memory Interface | — | DDR3, DDR2, QDRII+, RLDRAM II controllers |
| Configuration Mode | — | PS, FPP, JTAG with EPCS/EPCQ |