EP3SL200H780I3N vs EP3SL200H780I4L Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SL200H780I3N sa pamamagitan ng Intel at EP3SL200H780I4L sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SL200H780I3N | EP3SL200H780I4L |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Family | Stratix III L | Stratix III L |
| Logic Elements | 200,000 | 200,000 |
| RAM Bits | 10,901,504 | — |
| User I/O | 488 | — |
| Packhaging | 780-BBGA, FCBGA | 780-pin FC-HFBGA (Flip-Chip) |
| Package Pin Count | 780 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -40C to +100C (Industrial) | -40C to +100C (Industrial) |
| Supply Voltage (Core) | 0.9 V | — |
| Technology | CMOS, 40 nm | — |
| Process Node | 40 nm | — |
| Number of Terminals | 780 | — |
| Case / Package Code | BGA-780 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Logic Array Blocks (LABs) | — | 8,000 |
| Embedded Memory (Bits) | — | 10,901,504 |
| Maximum User I/O | — | 488 |
| Core Supply Voltage | — | 0.86 V to 1.15 V |
| Process Technology | — | 65 nm CMOS |
| Internal Performance | — | 375 MHz |
| Transceivers | — | Up to 24 channels |
| Transceiver Data Rate | — | Up to 6.375 Gbps |
| DSP Blocks | — | 9x9 / 18x18 / 36x36 multipliers |
| Memory Interface Support | — | DDR3, DDR2, DDR, QDR II+, RLDRAM II |
| JTAG Support | — | IEEE Std 1149.1 Boundary-Scan |
| Speed Grade | — | I4 (Industrial) |
| HardCopy Support | — | Compatible (Lattice-style migration path via HardCopy III) |