EP4CE115F23I7N vs EP4CGX110DF23I7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE115F23I7N sa pamamagitan ng Intel at EP4CGX110DF23I7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE115F23I7N | EP4CGX110DF23I7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Family | EP4CE115 (F23 package) | Cyclone IV GX |
| Logic Elements (LE) | 114,480 | — |
| Embedded Memory Bits | 3,981,312 bits | — |
| Maximum User I/Os | 280 | — |
| Logic Array Blocks (LABs) | 7,180 | 6,839 |
| Number of PLLs | 4 | — |
| 18x18 Hardware Multipliers | 266 | — |
| Core Voltage | 1.0 V / 1.2 V | — |
| I/O Voltage Banks | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Temperature na Operasyon | -40C to +100C (Industrial) | -40C to +100C (industrial) |
| Packhaging | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch | 484-ball FBGA, 23 x 23 mm, 1.00 mm pitch |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Technology | 60 nm low-power CMOS (TSMC) | 60 nm low-power CMOS |
| Configuration Method | JTAG, Active Serial, Active Parallel | — |
| Level ng MSL | 3 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Logic Elements | — | 109,424 |
| User I/O Pins | — | 270 |
| Embedded Memory | — | 4.4 Mbits (approximate) |
| Embedded 18x18 Multipliers | — | 56 |
| Transceivers | — | Up to 3.125 Gbps embedded transceivers |
| Core Supply Voltage (VCCINT) | — | 1.15 V to 1.25 V (nominal 1.2 V) |
| Speed Grade | — | 7 |
| Package Code | — | BGA (FBGA) |
| Configuration Memory | — | SRAM-based (volatile, requires external config device) |