EP4CGX110DF31C7N vs EP4CGX110DF31I7 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CGX110DF31C7N sa pamamagitan ng Intel at EP4CGX110DF31I7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CGX110DF31C7N EP4CGX110DF31I7
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV GX —
Logic Elements 109,424 —
Embedded Memory (bits) 5,621,760 —
Maximum User I/O 475 —
Process Technology 60 nm —
Core Voltage (VCCINT) 1.2 V nominal (1.16 V to 1.24 V) —
PLL Analog Voltage (VCCA) 2.5 V nominal (2.375 V to 2.625 V) —
I/O Bank Voltage (VCCIO) 1.2 V to 3.3 V (bank-dependent) —
Transceivers 8 channels, up to 3.125 Gbps 8 (up to 3.125 Gbps)
Hard IP Block PCIe Gen1 x1/x2/x4 —
PLLs 4 general-purpose 4
Packhaging 896-ball FBGA (F31) 896-BGA (FBGA-896), 31 mm
Speed Grade C7 (commercial) -7
Operating Temperature (Commercial) 0 °C to 85 °C (TJ) —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Series — Cyclone IV GX
Device Logic Elements — 109,424
Total Memory Bits — 5,621,760
Number of Logic Array Blocks (LABs) — Not specified in provided data [DATA_NEEDED: LAB count]
Number of I/O — 475 user I/O
Multipliers (18x18) — 432
M9K Memory Blocks — 270
Ball Pitch — 0.8 mm
Temperature Grade — Industrial (-40C to +100C Tj)
Core Voltage — 1.2 V typical
Configuration Method — SRAM (EPCS or JTAG)
Level ng MSL — 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days]

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