EP4CGX110DF31C8N vs EP4CGX110DF31I7 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CGX110DF31C8N sa pamamagitan ng Intel at EP4CGX110DF31I7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CGX110DF31C8N EP4CGX110DF31I7
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Family Cyclone IV GX —
Logic Elements 109,424 —
Logic Array Blocks (LABs) 6,839 —
Embedded Memory Bits 5,621,760 (approximately 702 Kbits) —
Embedded Memory Blocks M9K blocks, 9-bit parity —
DSP Blocks (18x18 Multipliers) 264 multipliers —
Maximum User I/Os 475 —
I/O Banks 8 —
PLLs 4 general-purpose PLLs 4
Transceivers 8 high-speed transceivers up to 3.125 Gbps 8 (up to 3.125 Gbps)
PCI Express Hard IP PCIe Gen1/Gen2 x1/x2/x4 —
Core Supply Voltage 1.2 V —
Process Technology 60 nm low-power CMOS —
Packhaging 896-ball FineLine BGA (F31), 31 mm 896-BGA (FBGA-896), 31 mm
Operating Temperature (Commercial) 0C to 85C —
Speed Grade 8 -7
Configuration SRAM-based, supports AS, PS, JTAG, FPP —
Tindminan RoHS Compliant Compliant
Series — Cyclone IV GX
Device Logic Elements — 109,424
Total Memory Bits — 5,621,760
Number of Logic Array Blocks (LABs) — Not specified in provided data [DATA_NEEDED: LAB count]
Number of I/O — 475 user I/O
Multipliers (18x18) — 432
M9K Memory Blocks — 270
Ball Pitch — 0.8 mm
Temperature Grade — Industrial (-40C to +100C Tj)
Core Voltage — 1.2 V typical
Configuration Method — SRAM (EPCS or JTAG)
Uri ng Pagpapasok — Surface Mount
Level ng MSL — 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days]

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