EPF6010ATC100-3N vs EPF6016ATC100-3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EPF6010ATC100-3N sa pamamagitan ng Intel at EPF6016ATC100-3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Intel
EPF6010ATC100-3N EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel

EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel

EPF6010ATC100-3N ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro EPF6010ATC100-3N EPF6016ATC100-3
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Huling Pagbili NRND
Family FLEX 6000 FLEX 6000
Logic Elements / Cells 880 —
Equivalent Gate Count 10,000 gates —
Logic Array Blocks (LABs) 88 —
User I/Os 71 81
Supply Voltage (Operating) 3.0 V to 3.6 V —
Maximum Internal Frequency 142.86 MHz —
Process Technology 0.42 µm CMOS 0.42 µm CMOS SRAM
Speed Grade -3 -3
Packhaging 100-pin TQFP (14 x 14 x 1.4 mm) 100-pin TQFP
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon 0 °C to +70 °C (commercial) 0°C to 85°C
Programming Method In-system SRAM via ByteBlaster/BitBlaster —
Level ng MSL 3 (168 hours) —
Tindminan RoHS Compliant [DATA_NEEDED: current RoHS status - older FLEX 6000 parts often non-RoHS]
Device Type — FPGA (Field Programmable Gate Array)
Logic Elements (LEs) — 1320
Typical Gates — 16000
Internal Frequency — 142.86 MHz
Supply Voltage (Core) — 3.3 V
Bilang ng Pin — 100
Configuration Method — SRAM, JTAG (IEEE 1149.1), ByteBlaster/BitBlaster

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