EPF6016ATC100-3 vs EPF6010ATC100-3N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EPF6016ATC100-3 sa pamamagitan ng Intel at EPF6010ATC100-3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Intel
EPF6010ATC100-3N EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel

EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel

EPF6010ATC100-3N ⚠ Huling Pagbili

Pagsanggunian na paghahambing

Parametro EPF6016ATC100-3 EPF6010ATC100-3N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND Huling Pagbili
Family FLEX 6000 FLEX 6000
Device Type FPGA (Field Programmable Gate Array) —
Logic Elements (LEs) 1320 —
Typical Gates 16000 —
User I/Os 81 71
Internal Frequency 142.86 MHz —
Process Technology 0.42 µm CMOS SRAM 0.42 µm CMOS
Supply Voltage (Core) 3.3 V —
Speed Grade -3 -3
Packhaging 100-pin TQFP 100-pin TQFP (14 x 14 x 1.4 mm)
Bilang ng Pin 100 —
Temperature na Operasyon 0°C to 85°C 0 °C to +70 °C (commercial)
Configuration Method SRAM, JTAG (IEEE 1149.1), ByteBlaster/BitBlaster —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS [DATA_NEEDED: current RoHS status - older FLEX 6000 parts often non-RoHS] Compliant
Logic Elements / Cells — 880
Equivalent Gate Count — 10,000 gates
Logic Array Blocks (LABs) — 88
Supply Voltage (Operating) — 3.0 V to 3.6 V
Maximum Internal Frequency — 142.86 MHz
Programming Method — In-system SRAM via ByteBlaster/BitBlaster
Level ng MSL — 3 (168 hours)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita