FDD8424H vs DMC2400UV-7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng FDD8424H sa pamamagitan ng onsemi at DMC2400UV-7 sa pamamagitan ng Diodes Incorporated. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Diodes Incorporated
DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc
DMC2400UV-7 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | FDD8424H | DMC2400UV-7 |
|---|---|---|
| Brand | onsemi | Diodes Incorporated |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | onsemi (formerly Fairchild Semiconductor) | — |
| Product Type | Dual N-Channel and P-Channel MOSFET | — |
| Process Technology | PowerTrench (advanced trench-gate) | — |
| Configuration | N-Channel and P-Channel, independent dice | Complementary Pair (N + P) |
| Package Type | TO-252 (DPAK), surface mount | — |
| N-Channel VDS (Drain-Source Voltage) | 40 V | — |
| N-Channel Continuous Drain Current | 20 A | — |
| N-Channel RDS(on) max at VGS=10V | 24 mΩ | — |
| P-Channel VDS (Drain-Source Voltage) | -40 V | — |
| P-Channel Continuous Drain Current | -20 A | — |
| P-Channel RDS(on) max at VGS=-10V | 54 mΩ | — |
| Gate Charge N-Ch (Qg) typ at VGS=10V | 20 nC | — |
| Input Capacitance Ciss max | 1000 pF | — |
| Total Power Dissipation (Pd) | 1.3 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +150 °C | -55C to +150C |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Compliant per GlobalSpec listing | — |
| ECCN | EAR99 | — |
| FET Type | — | N and P-Channel Complementary Pair |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (N-Ch) @ 25C | — | 1.03 A |
| Continuous Drain Current (P-Ch) @ 25C | — | 700 mA |
| RDS(on) Max @ VGS=4.5V, Id=200mA | — | 480 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | <1 V (low threshold) |
| Total Package Power Dissipation | — | 450 mW |
| Input na Kapasitans | — | Low (per datasheet) |
| Switching Speed | — | Fast |
| Input/Output Leakage | — | Low |
| Packhaging | — | SOT-563 |