FS35R12W1T4-T7 vs FS35R12W1T4 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng FS35R12W1T4-T7 sa pamamagitan ng Infineon at FS35R12W1T4 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro FS35R12W1T4-T7 FS35R12W1T4
Brand Infineon Infineon
Kategorya IGBTs IGBTs
Katayuan ng Lifecycle Aktibo Aktibo
Topolohiya Sixpack (three-phase inverter) + brake chopper Six-pack (3-phase inverter)
Collector-Emitter Voltage (Vces) 1200 V —
Nominal Collector Current (Ic nom) 35 A —
Pulsed Collector Current 65 A —
Total Power Dissipation 225 W —
IGBT Generation TRENCHSTOP IGBT4 —
Diode Generation Emitter Controlled 4 (EC4) —
Integrated NTC Yes (temperature monitoring) Yes
Package Family EasyPACK 1B —
Contact Technology Solder (T7 variant) —
Uri ng Pagpapasok Chassis Mount Screw-mount power terminals, PressFIT-pin option (FS35R12W1T4_B11)
Module Configuration 6 IGBTs + 6 diodes + brake chopper + NTC —
RoHS Compliance Compliant —
Application Class Industrial / Motor Drive / Solar —
Datasheet Source Infineon manufacturer datasheet —
Manufacturer — Infineon Technologies
Collector-Emitter Voltage (VCE) — 1200 V
Nominal Collector Current (IC nom) — 35 A
DC Collector Current — 65 A (per Mouser listing, TC limited)
IGBT Technology — TRENCHSTOP IGBT4 (Trench/Field-stop)
Diode Technology — Emitter Controlled 4 (EC4)
Packhaging — EasyPACK 1B (baseplate-less)
Temperature ng Junction na Operasyon — -40 C to +150 C
Configuration — 6 IGBTs + 6 freewheeling diodes
Tindminan RoHS — Compliant
Short-Circuit Withstand Time — 10 us (typical for IGBT4 class)
Datasheet Document Length — 9 pages (per AllDatasheet mirror)
Power Dissipation Range — 135 W - 275 W (EasyPACK 1B family)

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