H5AN4G8NBJR-UHC vs H5AN4G8NBJR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN4G8NBJR-UHC sa pamamagitan ng SK hynix at H5AN4G8NBJR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN4G8NBJR-UHC | H5AN4G8NBJR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | — |
| Rate ng Data | 2400 Mbps (PC2400) | 2666 Mbps (DDR4-2666) |
| Volte ng Pagbibigay | 1.2 V | — |
| Interface | DDR4 (JEDEC) | — |
| Packhaging | TFBGA-78 (11 x 7.5 mm) | FBGA-78 (7.5 x 11 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | CMOS DRAM |
| Lifecycle Code | Active | — |
| Tindminan RoHS | Compliant (Rohs Code: Yes) | Compliant (Lead-Free & Halogen-Free per datasheet) |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for -UHC speed bin] | [DATA_NEEDED: CAS latency for 2666 grade] |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | [DATA_NEEDED: refresh rate] |
| Laki ng Memory | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Volatile / Non-Volatile | — | Volatile |
| Packaging | — | Tray |
| Katayuan ng Lifecycle | — | Active |