H5AN8G6NAFR-PBC vs H5AN8G6NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NAFR-PBC sa pamamagitan ng SK hynix at H5AN8G6NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G6NAFR-PBC | H5AN8G6NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | — |
| Organisasyon | 512M x 16 | 512M x 16 |
| VDD Supply Voltage | 1.20 V +/- 0.06 V | — |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V | — |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V | — |
| Uri ng Interface | DDR4 (parallel, double data rate) | — |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) | — |
| Refresh | Auto / Self Refresh | — |
| DLL | DLL ON mode for speed bin operation | — |
| Clock | Differential clock (CK/CK#) | — |
| Packhaging | TFBGA-96 (rectangular) | — |
| Number of Terminals | 96 | 96 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant (Lead-Free & Halogen-Free) |
| Composition | CMOS | — |
| Memory Density | — | 8 Gb |
| Volte ng Pagbibigay | — | 1.2 V |
| Interface | — | DDR4 (JEDEC-standard) |
| Access Mode | — | Multi Bank Page Burst |
| Package Code | — | TFBGA |
| Package Shape | — | Rectangular |
| Temperature Grade | — | OTHER (per Partstack listing) |
| Technology | — | CMOS |
| Speed Grade | — | -RDC (see datasheet for bin timing) |
| Family | — | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC |
| Max Clock Rate | — | [DATA_NEEDED: max clock rate for -RDC bin] |