H5AN8G6NAFR-PBC vs H5AN8G8NAFR-PBC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NAFR-PBC sa pamamagitan ng SK hynix at H5AN8G8NAFR-PBC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G6NAFR-PBC | H5AN8G8NAFR-PBC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasyon | 512M x 16 | 1G x 8 |
| VDD Supply Voltage | 1.20 V +/- 0.06 V | — |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V | — |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V | — |
| Uri ng Interface | DDR4 (parallel, double data rate) | — |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) | — |
| Refresh | Auto / Self Refresh | — |
| DLL | DLL ON mode for speed bin operation | — |
| Clock | Differential clock (CK/CK#) | — |
| Packhaging | TFBGA-96 (rectangular) | FBGA-78 |
| Number of Terminals | 96 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Composition | CMOS | — |
| Volte ng Pagbibigay | — | 1.2 V |
| Speed Grade / Data Rate | — | [DATA_NEEDED: speed grade / data rate] |
| Interface | — | DDR4 (double data rate, synchronized to clock) |
| Address Inputs | — | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) |
| Connectivity Test Mode | — | TEN (optional input on x4/x8, required on x16) |
| Process Technology | — | CMOS |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / July 2017 |