H5AN8G8NAFR-VKC vs H5AN8G8NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NAFR-VKC sa pamamagitan ng SK hynix at H5AN8G8NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NAFR-VKC | H5AN8G8NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasyon | 1G x 8 | 1G x 8 (x8) |
| Speed Grade | DDR4-2666 (VKC bin) | -RDC (DDR4-2666 class) |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface | SSTL12 | DDR4 (Double Data Rate 4) |
| Burst Length | 8 (BL8) | 8 (BL8) |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Packhaging | 78-ball FBGA | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Rate ng Data | — | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |