H5AN8G8NAFR-VKC vs H5AN8G8NAFR-RDC 比較
詳細並排比較 H5AN8G8NAFR-VKC 由 SK hynix 與 H5AN8G8NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NAFR-VKC | H5AN8G8NAFR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| 組織 | 1G x 8 | 1G x 8 (x8) |
| Speed Grade | DDR4-2666 (VKC bin) | -RDC (DDR4-2666 class) |
| Supply Voltage (VDD) | 1.2 V | — |
| 介面 | SSTL12 | DDR4 (Double Data Rate 4) |
| Burst Length | 8 (BL8) | 8 (BL8) |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | — |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| 封裝 | 78-ball FBGA | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| RoHS 狀態 | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| 資料速率 | — | 2666 MT/s (per -R speed grade suffix) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |