H5AN8G8NCJR-RDC vs H5AN8G8NCJR-XNC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NCJR-RDC sa pamamagitan ng SK hynix at H5AN8G8NCJR-XNC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NCJR-RDC | H5AN8G8NCJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $30.69 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb (1 GB) | — |
| Organisasyon | x8 | 1 Gb x 8 |
| Rate ng Data | up to 2666 Mbps | 3200 Mbps (DDR4-3200) |
| Volte ng Pagbibigay | 1.2 V (VDD) | 1.14 V to 1.26 V (1.2 V nominal) |
| Interface | DDR4 (JEDEC standard) | DDR4 (8-bit data interface) |
| Bank Architecture | 4 bank groups x 4 banks | — |
| Burst Length | BL8 | — |
| Packhaging | 78-ball FBGA | 78-ball FBGA, 7.5 mm x 11 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range for -RDC suffix] | 0 C to +85 C |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for -RDC speed grade] | — |
| Generation | C-die family (NCJR) | — |
| Lead Free | Yes | — |
| Wala sa Halogen | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Laki ng Memory | — | 8 Gbit |
| Clock Frequency | — | 1.6 GHz |
| Architecture | — | Bank-group based DDR4 |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge |
| On-Chip Termination | — | Dynamic ODT |
| Calibration | — | ZQ calibration, write leveling |
| Error Handling | — | CRC function |
| Reset | — | Asynchronous reset |
| Data Mask | — | Data mask function |
| Current - Operating | — | 39 mA |
| Current - Standby | — | 30 mA |
| Lead-Free / Halogen-Free | — | Yes |