H5AN8G8NDJR-XNC vs H5AN8G8NCJR-XNC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NDJR-XNC sa pamamagitan ng SK hynix at H5AN8G8NCJR-XNC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NDJR-XNC | H5AN8G8NCJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $30.69 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gbit (1 G x 8) | 8 Gbit |
| Rate ng Data | 3200 MT/s (DDR4-3200) | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| I/O Voltage (VDDQ) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Operating Temperature (TC) | 0°C to +95°C | — |
| Packhaging | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA, 7.5 mm x 11 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Organization | 1G x 8 | — |
| Interface | Parallel | DDR4 (8-bit data interface) |
| Clock Frequency | 1.6 GHz (I/O clock) | 1.6 GHz |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Packaging | Tray | — |
| Status | Active | — |
| Organisasyon | — | 1 Gb x 8 |
| Volte ng Pagbibigay | — | 1.14 V to 1.26 V (1.2 V nominal) |
| Temperature na Operasyon | — | 0 C to +85 C |
| Architecture | — | Bank-group based DDR4 |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge |
| On-Chip Termination | — | Dynamic ODT |
| Calibration | — | ZQ calibration, write leveling |
| Error Handling | — | CRC function |
| Reset | — | Asynchronous reset |
| Data Mask | — | Data mask function |
| Current - Operating | — | 39 mA |
| Current - Standby | — | 30 mA |
| Tindminan RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes |