H5ANAG8NBJR-VKC vs H5ANAG8NCMR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NBJR-VKC sa pamamagitan ng SK hynix at H5ANAG8NCMR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG8NBJR-VKC | H5ANAG8NCMR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | — |
| Organisasyon | 2G x 8 | — |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | VK (per SK hynix speed-bin suffix) |
| Volte ng Pagbibigay | 1.14 V to 1.26 V (VDDQ) | — |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Packhaging | FBGA-78 | FBGA-78 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| Tindminan RoHS | Compliant, Lead-Free and Halogen-Free | [DATA_NEEDED: RoHS status] |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Laki ng Memory | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Rate ng Data | — | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for VK speed bin] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |