H5TC4G63AFR-PBA vs K4B4G1646D-BHMA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBA sa pamamagitan ng SK hynix at K4B4G1646D-BHMA sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBA | K4B4G1646D-BHMA |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $3.98 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | 1866 Mbps |
| Packhaging | 96-ball FBGA | 96-ball FBGA |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | 8 and 4 |
| CAS Latency (CL) | 11, 12, 13 | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (Tcase) | — |
| Interface | 16-bit I/O | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | — |
| Volte ng Pagbibigay | — | 1.35 V (1.283 V to 1.45 V) |
| Temperature na Operasyon | — | -40°C to +95°C (TC) |
| Latensya ng CAS | — | 13 (at 1866 Mbps) |
| Number of Terminals | — | 96 |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |
| Refresh Mode | — | Auto and Self Refresh |