IAUC50N08S5L096ATMA1 vs BSC265N10LSFGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC50N08S5L096ATMA1 sa pamamagitan ng Infineon at BSC265N10LSFGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC50N08S5L096ATMA1 BSC265N10LSFGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Series OptiMOS 5 —
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
Hanay ng Temperature na Operasyon -55°C to +175°C -55 C to +150 C (junction)
Packhaging PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-1 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Level ng MSL [DATA_NEEDED: MSL level] 1 (per JEDEC J-STD-020)
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — 6.5 A
Power Dissipation (PD, Tc) — 78 W
Technology — OptiMOS 2 (TrenchFET)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg total at VGS=10V]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Avalanche Rated — Yes
Series — OptiMOS 2

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