IAUCN04S7L005ATMA1 vs IAUCN04S7N037GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7L005ATMA1 sa pamamagitan ng Infineon at IAUCN04S7N037GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 ✓ NakahandaInfineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S7L005ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 7 (trench N-channel MOSFET) | Trench MOSFET, N-Channel |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_C=25°C) | 430 A (Tj) | — |
| Continuous Drain Current (I_D, T_C=100°C) | [DATA_NEEDED: I_D at T_C=100°C] | — |
| On-Resistance R_DS(on) max | 0.52 mΩ | — |
| Power Dissipation (P_D) | 179 W (T_C) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge (Q_g) | [DATA_NEEDED: total Q_g in nC] | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Packhaging | PG-TDSON-8-43 (TDSON-8) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Bilang ng Pin | 8 | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |