IAUCN04S7N012ATMA1 vs IAUC100N04S6L025ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N012ATMA1 sa pamamagitan ng Infineon at IAUC100N04S6L025ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon

IAUCN04S7N012ATMA1 ✓ Nakahanda
Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN04S7N012ATMA1 IAUC100N04S6L025ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Technology OptiMOS-7 (trench) OptiMOS 6 40V trench MOSFET
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at TC=25°C 120 A —
On-State Resistance RDS(on) max at VGS=10V 1.2 mΩ 2.5 mOhm
On-State Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] [DATA_NEEDED: Qg total]
Hanay ng Temperature na Operasyon -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] —
Packhaging PG-TDSON-8-34 (8-PowerTDFN) PG-TDSON-8 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Transistor Grade Automotive (AEC-Q101) —
Pwersang Pinahihigpit (Ptot) [DATA_NEEDED: Ptot at TC=25°C] —
Thermal Resistance RθJA [DATA_NEEDED: RθJA on JEDEC PCB] —
Tindminan RoHS Compliant Compliant
Wala sa Halogen Yes —
Level ng MSL 1 1 (per JEDEC J-STD-020)
Polarity N-Channel N-Channel
Continuous Drain Current (ID) at TC=25C — 100 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Power Dissipation (PD) at TC=25C — 62 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Automotive Qualification — AEC-Q101 qualified
Lead-Free — Yes

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