IAUS260N10S5N019TATMA1 vs IPC100N04S5L1R5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUS260N10S5N019TATMA1 sa pamamagitan ng Infineon at IPC100N04S5L1R5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ NakahandaInfineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUS260N10S5N019TATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 260 A (Tj) | — |
| On-State Resistance (Rds(on)) | 1.9 mΩ (typical, 10 V Vgs) | — |
| Power Dissipation (Pd) | 300 W (Tc) | — |
| Packhaging | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-TDSON-8-34 (SS08 leadless) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 16 | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (Tj) | -55C to +175C |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Technology | OptiMOS 5 trench-gate | — |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) | — |
| Tindminan RoHS | Compliant | Compliant (Green Product) |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| Level ng MSL | — | MSL1 (260C peak reflow) |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |