IDD06SG60CXTMA2 vs IGD06N60TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IDD06SG60CXTMA2 sa pamamagitan ng Infineon at IGD06N60TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IDD06SG60CXTMA2 - 600V 6A CoolSiC G3 SiC Schottky Diode | Infineon
IDD06SG60CXTMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IDD06SG60CXTMA2 | IGD06N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Diodes | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ Schottky Diode G3 (thinQ™) | — |
| Diode Configuration | Single | — |
| Technology | Silicon Carbide (SiC) Schottky | — |
| Reverse Voltage (VRRM) | 600 V | — |
| Continuous Forward Current (IF) | 6 A | — |
| Repetitive Peak Forward Current (IFRM) | [DATA_NEEDED: IFRM] | — |
| Non-Repetitive Peak Forward Surge Current (IFSM) | 32 A | — |
| Forward Voltage (VF) at IF=6A | 2.1 V (typical) | — |
| Reverse Current (IR) Max | 500 nA | — |
| Total Capacitive Charge (Qc) | [DATA_NEEDED: Qc value] | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | -40 °C to +175 °C |
| Packhaging / Kaso | PG-TO252-3 (DPAK) | — |
| Style ng Pagpapasok | Surface Mount (SMD/SMT) | — |
| Packaging | Cut Tape (Tape & Reel per factory standard) | — |
| Tindminan RoHS | Compliant | Compliant |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | — | 88 W |
| Gate-Emitter Voltage (VGE) | — | ±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Integrated Diode | — | Yes, soft-recovery emitter-controlled diode |
| Storage Temperature | — | -55 °C to +150 °C |
| Packhaging | — | PG-TO252-3-11 (DPAK / TO-252) |
| Uri ng Pagpapasok | — | Surface Mount |
| Lead-Free | — | Yes |