IGB30N60H3ATMA1 vs IKD15N60RFATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IGB30N60H3ATMA1 sa pamamagitan ng Infineon at IKD15N60RFATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IGB30N60H3ATMA1 IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 - 600V 30A TRENCHSTOP IGBT3 | Infineon

IGB30N60H3ATMA1 ✓ Nakahanda
Infineon
IKD15N60RFATMA1 IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 - 600V 15A TRENCHSTOP IGBT3 | Infineon

IKD15N60RFATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IGB30N60H3ATMA1 IKD15N60RFATMA1
Brand Infineon Infineon
Kategorya IGBTs IGBTs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family TRENCHSTOP IGBT3 —
Collector-Emitter Voltage (VCE) 600 V —
Continuous DC Collector Current (IC, TC=25C) 60 A —
Pulsed Collector Current (ICpuls) [DATA_NEEDED: pulsed collector current value] —
Pwersang Pinahihigpit (Ptot) 187 W —
Gate-Emitter Voltage (VGE) +/- 20 V —
Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) 1.95 V (typ, at IC=30 A, VGE=15 V) —
Gate-Emitter Threshold Voltage (VGE(th)) [DATA_NEEDED: VGE(th) typical value] —
Turn-Off Time (toff) 262 ns (nominal) —
Technology Trench Field Stop TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode)
Configuration Single IGBT —
Packhaging PG-TO263-3-2 (D2PAK) PG-TO252-3 (DPAK), 3 pins (2 + tab)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature ng Junction na Operasyon -40C to +175C -40C to +175C
Storage Temperature -55C to +150C —
Terminal Form Gull Wing —
Bilang ng Pin 3 (2 + Tab) —
Tindminan RoHS Compliant —
Switching Behavior MOSFET-like turn-off —
Collector-Emitter Voltage (VCES) — 600 V
Continuous Collector Current (IC at TC=25C) — 30 A
Continuous Collector Current (IC at TC=100C) — 15 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: ICM value]
Gate-Emitter Voltage (VGES) — +/-20 V
Gate-Emitter Threshold (VGE(th)) — [DATA_NEEDED: VGE(th) typical value]
VCE(sat) at IC=15A, VGE=15V — 1.5 V (typical)
Maximum Power Dissipation (Ptot) — 250 W
Integrated Anti-Parallel Diode — Yes (RC-Drives Fast, co-packaged)
Switching Speed Class — Hard-switching, RC-Drives Fast
Target Application — Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives)
RoHS Compliance — Compliant

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