IKD15N60RFATMA1 vs IKD15N60RATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IKD15N60RFATMA1 sa pamamagitan ng Infineon at IKD15N60RATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IKD15N60RFATMA1 | IKD15N60RATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | IGBTs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | TRENCHSTOP IGBT3 (field-stop trench with anti-parallel diode) | — |
| Collector-Emitter Voltage (VCES) | 600 V | 600 V |
| Continuous Collector Current (IC at TC=25C) | 30 A | — |
| Continuous Collector Current (IC at TC=100C) | 15 A | — |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: ICM value] | — |
| Gate-Emitter Voltage (VGES) | +/-20 V | — |
| Gate-Emitter Threshold (VGE(th)) | [DATA_NEEDED: VGE(th) typical value] | — |
| VCE(sat) at IC=15A, VGE=15V | 1.5 V (typical) | — |
| Maximum Power Dissipation (Ptot) | 250 W | — |
| Temperature ng Junction na Operasyon | -40C to +175C | -40 C to +175 C |
| Integrated Anti-Parallel Diode | Yes (RC-Drives Fast, co-packaged) | — |
| Packhaging | PG-TO252-3 (DPAK), 3 pins (2 + tab) | PG-TO252-3 (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Switching Speed Class | Hard-switching, RC-Drives Fast | — |
| Target Application | Consumer drives (washing machines, refrigerator compressors, fans, small industrial motor drives) | — |
| RoHS Compliance | Compliant | — |
| Uri ng Transistor | — | IGBT - Trench Field Stop with integrated diode |
| Continuous Collector Current (IC, TC=100C) | — | 30 A |
| Pulsed Collector Current (ICM, tp=1ms) | — | [DATA_NEEDED: pulsed ICM value] |
| Total Power Dissipation (Ptot, TC=25C) | — | 250 W |
| Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) | — | 1.65 V (typical, VGE=15V, IC=15A) |
| Gate-Emitter Threshold Voltage (VGE(th)) | — | 2.1 V (VCE=VGE, IC=15A) |
| Gate Charge (Qg) | — | 90 nC (typical) |
| Turn-On Delay / Fall Time (td(on)/tf) | — | 16 ns / 183 ns (typical) |
| Integrated Diode | — | Yes (anti-parallel, co-packaged) |
| Tindminan RoHS | — | Compliant |
| Gate Drive Voltage (recommended) | — | 15 V |