IPB025N10N3GATMA1 vs IPB017N10N5LFATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB025N10N3GATMA1 sa pamamagitan ng Infineon at IPB017N10N5LFATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ NakahandaInfineon
IPB017N10N5LFATMA1 - 100V 1.7mΩ OptiMOS 5 Linear FET | Infineon
IPB017N10N5LFATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB025N10N3GATMA1 | IPB017N10N5LFATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | — |
| Input Capacitance (Ciss) | 2.58 nF | — |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | — |
| Packhaging | PG-TO263-7 (D2PAK-7) 6+Tab | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55C to +175C (junction) |
| Technology | OptiMOS 3 trench MOSFET | MOSFET (Metal Oxide Semiconductor) |
| Level ng MSL | 1 (unlimited) | 1 (unlimited) |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 Linear FET |
| Continuous Drain Current (ID) @ TC=25C | — | 180 A |
| Continuous Drain Current (ID) @ TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Maximum Power Dissipation (PD) @ TC=25C | — | 313 W |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | — | 1.7 mΩ (max) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Packhaging / Kaso | — | PG-TO263-7 (D2PAK-7), surface mount |
| Avalanche Rated | — | Yes |
| Linear-Mode (SOA) Optimized | — | Yes (OptiMOS Linear FET) |