IPB110P06LMATMA1 vs IGI65D1414A3MSXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB110P06LMATMA1 sa pamamagitan ng Infineon at IGI65D1414A3MSXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
IGI65D1414A3MSXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB110P06LMATMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | P-Channel | — |
| Technology | OptiMOS (trench MOSFET) | Enhancement-mode GaN HEMT (eMode) |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -100 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (TJ) | [DATA_NEEDED: operating temperature range] |
| Packhaging / Kaso | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolGaN™ HEMT |
| Configuration | — | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (V_DS, max) | — | 650 V |
| On-Resistance (R_DS(on), typ) | — | 140 mΩ per FET |
| Continuous Drain Current | — | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Packhaging | — | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Total Gate Charge (Q_G, typ) | — | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | — | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | — | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | — | [DATA_NEEDED: R_thJA value] |
| Typical Applications | — | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| RoHS Compliance | — | Compliant |