IPC100N04S5L1R5ATMA1 vs IAUS260N10S5N019TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC100N04S5L1R5ATMA1 sa pamamagitan ng Infineon at IAUS260N10S5N019TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ NakahandaInfineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPC100N04S5L1R5ATMA1 | IAUS260N10S5N019TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55 C to +175 C (Tj) |
| Packhaging | PG-TDSON-8-34 (SS08 leadless) | PG-HDSOP-16-2 (TOLT, topside-cooled) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (260C peak reflow) | — |
| AEC-Q101 Qualified | Yes | — |
| Tindminan RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Product Series | — | OptiMOS 5 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) | — | 260 A (Tj) |
| On-State Resistance (Rds(on)) | — | 1.9 mΩ (typical, 10 V Vgs) |
| Power Dissipation (Pd) | — | 300 W (Tc) |
| Bilang ng Pin | — | 16 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Technology | — | OptiMOS 5 trench-gate |
| Automotive Qualified | — | Yes (IAUS prefix denotes automotive grade) |