IPD031N06L3GATMA1 vs IAUZ30N06S5L140ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD031N06L3GATMA1 sa pamamagitan ng Infineon at IAUZ30N06S5L140ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD031N06L3GATMA1 IAUZ30N06S5L140ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A —
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V 2.2 V (typ)
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Hanay ng Temperature na Operasyon -55°C to +175°C —
Packhaging PG-TO252-3 (DPAK) PG-TSDSON-8-32 (S3O8, 3x3 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Series OptiMOS 3 —
Level ng MSL 1 (Unlimited) —
Tindminan RoHS Compliant —
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 30 A (Tj)
Power Dissipation (PD, Tc) — 33 W
RDS(on) Max @ VGS=10 V — 14 mΩ
Total Gate Charge (Qg) — 12.2 nC @ VGS=10 V
Output Capacitance (Coss) — 888 pF @ VDS=30 V
Temperature ng Junction na Operasyon — -55°C to +175°C
Technology Family — OptiMOS 5
Automotive Grade — AEC-Q101 qualified
Gate-Source Voltage Max — ±20 V
Lead-Free / RoHS — Yes (RoHS compliant)

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