IPD031N06L3GATMA1 vs IPD034N06N3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD031N06L3GATMA1 sa pamamagitan ng Infineon at IPD034N06N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD031N06L3GATMA1 IPD034N06N3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology MOSFET (Metal Oxide) N-Channel Trench MOSFET (OptiMOS 3)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A —
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Hanay ng Temperature na Operasyon -55°C to +175°C [DATA_NEEDED: Tj min/max]
Packhaging PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Series OptiMOS 3 OptiMOS 3
Level ng MSL 1 (Unlimited) [DATA_NEEDED: MSL rating]
Tindminan RoHS Compliant Compliant (Pb-free green finish)
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc — 100 A
Maximum Power Dissipation (Ptot) — 167 W
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Gate-Source Voltage (VGS) max — [DATA_NEEDED: max VGS rating]
Pin Configuration — 3-Pin (2 + Tab)
Automotive Qualified — Yes (per Infineon product page)

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