IPD031N06L3GATMA1 vs IPG20N10S436AATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD031N06L3GATMA1 sa pamamagitan ng Infineon at IPG20N10S436AATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPG20N10S436AATMA1 IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon

IPG20N10S436AATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD031N06L3GATMA1 IPG20N10S436AATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) 400 A —
Maximum Power Dissipation (PD) at TC=25°C 167 W —
RDS(on) Max at VGS=10V 3.1 mΩ —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V —
Gate Drive Voltage (Max RDS(on)) 4.5 V, 10 V —
Total Gate Charge (Qg) Typ [DATA_NEEDED: Qg typical value] —
Hanay ng Temperature na Operasyon -55°C to +175°C —
Packhaging PG-TO252-3 (DPAK) PG-TDSON-8-10 (Wettable Flank)
Uri ng Pagpapasok Surface Mount Surface Mount
Series OptiMOS 3 —
Level ng MSL 1 (Unlimited) MSL1 (260 C peak reflow)
Tindminan RoHS Compliant Compliant (Green Product)
Configuration — Dual N-Channel (2 Elements with Built-in Diode)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 20 A (per channel)
Total Power Dissipation (PD) — 43 W
Operating Mode — Enhancement Mode
Operating Temperature (TJ max) — +175 C
JESD-609 Code — e3
Automotive Qualification — AEC-Q101
Avalanche Tested — 100%
AOI Compatible — Yes (Wettable Flank)
Channel Type — N-Channel Normal Level

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