IPD052N10NF2SATMA1 vs BSC050N04LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD052N10NF2SATMA1 sa pamamagitan ng Infineon at BSC050N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD052N10NF2SATMA1 IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon

IPD052N10NF2SATMA1 - 100V N-Ch MOSFET 5.2mΩ 118A | Infineon

IPD052N10NF2SATMA1 ✓ Nakahanda
Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD052N10NF2SATMA1 BSC050N04LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Number IPD052N10NF2SATMA1 —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS 5 100V OptiMOS 3 (trench MOSFET)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta 17 A —
Continuous Drain Current (ID) at Tc 118 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 150 W —
Drain-Source On-Resistance (RDS(on)) Max 5.2 mΩ @ VGS=10V, ID=70A —
Gate-Source Threshold Voltage (VGS(th)) Max 3.8 V @ ID=84µA —
Packhaging / Kaso PG-TO252-3 (DPAK, SC-63) —
Supplier Device Package PG-TO252-3 —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55 °C to +175 °C (TJ) —
Tindminan RoHS Compliant Compliant
Number of Channels 1 —
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Packhaging — PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
Hanay ng Temperature na Operasyon — -55C to +150C
Avalanche Energy Rated — Yes (single-pulse avalanche)
Level ng MSL — 1

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