IPD30N06S2L13ATMA4 vs IPD90N06S407ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD30N06S2L13ATMA4 sa pamamagitan ng Infineon at IPD90N06S407ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD30N06S2L13ATMA4 | IPD90N06S407ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS | — |
| Channel Type | N-Channel | — |
| Mode | Enhancement | — |
| Drain-Source Voltage (Vds) | 55 V | — |
| Continuous Drain Current (Id) | 30 A (Tc) | — |
| Power Dissipation (Pd) | 136 W (Tc) | — |
| Packhaging | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 °C to +175 °C (Tj) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 Qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | MSL1 (up to 260 C peak reflow) |
| Lead-Free / RoHS | Yes (Green Package) | Yes (Green Product) |
| Avalanche Tested | 100 % production-tested | — |
| Technology | Planar (OptiMOS) | — |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | — |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | — |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | — |
| Bilang ng Pin | 3 (Drain tab + Gate + Source) | — |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | — |
| FET Type | — | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D at T_C) | — | 90 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | — | 6.9 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | 4 V at 40 uA |
| Total Gate Charge (Q_G) at V_GS=10 V | — | 56 nC |
| Maximum Power Dissipation (P_D at T_C) | — | 79 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Avalanche Rating | — | 100% Avalanche Tested |