IPD50P04P413ATMA2 vs IPD90P04P4L04ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50P04P413ATMA2 sa pamamagitan ng Infineon at IPD90P04P4L04ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50P04P413ATMA2 - P-Ch 40V 50A MOSFET | Infineon OptiMOS-P2
IPD50P04P413ATMA2 ✓ NakahandaInfineon
IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon
IPD90P04P4L04ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD50P04P413ATMA2 | IPD90P04P4L04ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity / Device Type | P-Channel MOSFET | — |
| Technology | OptiMOS-P2 (Trench) | — |
| Drain-Source Voltage (VDS) | -40 V | — |
| Continuous Drain Current (TC=25°C, ID) | 50 A | — |
| Continuous Drain Current (TC=100°C, ID) | [DATA_NEEDED: ID @ 100°C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Power Dissipation (TC=25°C, Ptot) | 58 W | — |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΩ (typ) / 12.6 mΩ (max) | — |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Maximum Junction Temperature (TJ,max) | 175 °C | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55 C to +175 C |
| Packhaging | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | — |
| Level ng MSL | 1 | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Tindminan RoHS | Compliant | Compliant |
| Part Number | — | IPD90P04P4L04ATMA2 |
| Manufacturer | — | Infineon Technologies |
| Family | — | OptiMOS-P2 |
| Channel Type | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -40 V |
| Continuous Drain Current (Id) at Tc=25C | — | -90 A |
| Power Dissipation (Pd) at Tc=25C | — | 125 W |
| On-State Resistance Rds(on) typ at Vgs=-10V | — | 4.3 mOhm |
| Gate Threshold Voltage Vgs(th) typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Maximum Junction Temperature | — | 175 C |
| Bilang ng Pins | — | 3 (2 + Tab) |