IPD60R180P7ATMA1 vs IPD65R380E6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R180P7ATMA1 sa pamamagitan ng Infineon at IPD65R380E6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD60R180P7ATMA1 IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon

IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon

IPD60R180P7ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD60R180P7ATMA1 IPD65R380E6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
Technology Superjunction (SJ) N-channel MOSFET Superjunction (CoolMOS™)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 18 A —
On-Resistance RDS(on) max at VGS=10V 180 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Total Power Dissipation (PD) at TC=25C 72 W —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging PG-TO252-3 (DPAK) PG-TO252-3 (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited) 1
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Shipping Package Tape and Reel (ATMA1 suffix) —
Series — CoolMOS™ E6
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 650 V
Continuous Drain Current (I_D) at T_C — 10.6 A
R_DS(on) max at V_GS=10V — 380 mΩ
R_DS(on) test conditions — 3.2 A, 10 V
Gate-Source Voltage (V_GS) max — ±20 V
Gate Threshold Voltage (V_GS(th)) — 3.5 V typ
Gate Charge (Q_G) — 39 nC at 10 V
Input Capacitance (C_iss) — 710 pF at 100 V
Power Dissipation (P_D) at T_C — 83 W
Hanay ng Temperature na Operasyon — -55 °C to +150 °C

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