IPD60R180P7ATMA1 vs IPD65R380E6ATMA1 比較
詳細並排比較 IPD60R180P7ATMA1 由 Infineon 與 IPD65R380E6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD60R180P7ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) at TC=25C | 18 A | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Total Power Dissipation (PD) at TC=25C | 72 W | — |
| 工作接面溫度 | -55C to +150C | — |
| 封裝 | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (unlimited) | 1 |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Shipping Package | Tape and Reel (ATMA1 suffix) | — |
| Series | — | CoolMOS™ E6 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| 工作溫度範圍 | — | -55 °C to +150 °C |