IPD60R385CPATMA1 vs BSC052N08NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R385CPATMA1 sa pamamagitan ng Infineon at BSC052N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD60R385CPATMA1 IPD60R385CPATMA1 - 600V 385mΩ CoolMOS™ CP MOSFET | Infineon

IPD60R385CPATMA1 - 600V 385mΩ CoolMOS™ CP MOSFET | Infineon

IPD60R385CPATMA1 ✓ Nakahanda
Infineon
BSC052N08NS5ATMA1 BSC052N08NS5ATMA1 - 80V 95A 5.2mΩ OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 - 80V 95A 5.2mΩ OptiMOS 5 N-FET | Infineon

BSC052N08NS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD60R385CPATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ CP (5th generation) —
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 600 V —
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V) —
Continuous Drain Current (ID) at TC=25°C 9 A —
Pulsed Drain Current (IDM) 27 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25°C 83 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Gate Charge (Qg) 18 nC (typ) —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Temperature ng Junction na Operasyon -55 °C to +150 °C -55C to +150C
Packhaging / Kaso PG-TO252-3 (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source; tab = Drain) —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Part Number — BSC052N08NS5ATMA1
Technology — OptiMOS 5
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc) — 95 A
On-Resistance RDS(on) max @ VGS=10V — 5.2 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage VGS(th) typ — 2.5-3.0 V
Total Power Dissipation (Tc) — 83 W
Total Power Dissipation (Ta) — 2.5 W
Packhaging — PG-TDSON-8 (SuperSO8) 5x6 mm

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