IPD60R385CPATMA1 vs BSC052N08NS5ATMA1 Comparison

Detailed side-by-side comparison of IPD60R385CPATMA1 by Infineon and BSC052N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD60R385CPATMA1 BSC052N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.52
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ CP (5th generation)
FET Type N-Channel
Drain-Source Voltage (V(BR)DSS) 600 V
Drain-Source On-Resistance (RDS(on)) 385 mΩ (typ, VGS = 10 V)
Continuous Drain Current (ID) at TC=25°C 9 A
Pulsed Drain Current (IDM) 27 A [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25°C 83 W
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)]
Gate Charge (Qg) 18 nC (typ)
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss]
Operating Junction Temperature -55 °C to +150 °C -55C to +150C
Package / Case PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source; tab = Drain)
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
Part Number BSC052N08NS5ATMA1
Technology OptiMOS 5
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 80 V
Continuous Drain Current (ID, Tc) 95 A
On-Resistance RDS(on) max @ VGS=10V 5.2 mΩ
Gate-Source Voltage (VGS) ±20 V
Gate Threshold Voltage VGS(th) typ 2.5-3.0 V
Total Power Dissipation (Tc) 83 W
Total Power Dissipation (Ta) 2.5 W
Package PG-TDSON-8 (SuperSO8) 5x6 mm

Datasheets & Resources

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