IPD70R1K4P7SAUMA1 vs IPD60R145CFD7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD70R1K4P7SAUMA1 sa pamamagitan ng Infineon at IPD60R145CFD7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD70R1K4P7SAUMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | CoolMOS P7 (700V Superjunction) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID) at Tc=25C | 4 A | — |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V, ID | 1.4 ohm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 23 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | PG-TO252-3 (DPAK) | TO-252AA (DPAK) surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (DPAK, 3-pin + tab) |
| Bilang ng Pin | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Technology | Superjunction (CoolMOS P7) | CoolMOS CFD7 (superjunction) |
| Avalanche Energy Rated | Yes (100% avalanche tested) | — |
| ESD Protection | Integrated (per datasheet) | — |
| Tindminan RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>) | — | 16 A (T<sub>C</sub> = 25C) |
| On-Resistance R<sub>DS(on)</sub> max | — | 145 mOhm |
| Power Dissipation (P<sub>D</sub>) | — | 83 W (T<sub>C</sub> = 25C) |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vth typical/min/max] |
| Body Diode | — | Integrated fast body diode (low Q<sub>rr</sub>) |
| Temperature na Operasyon | — | -55C to +150C (junction) |
| Series | — | CoolMOS CFD7 |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |
| Target Application | — | ZVS / LLC resonant converters, soft switching |