IPD70R1K4P7SAUMA1 vs IPD60R145CFD7ATMA1 比較

詳細並排比較 IPD70R1K4P7SAUMA1 由 Infineon 與 IPD60R145CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ 啟用中

規格比較

參數 IPD70R1K4P7SAUMA1 IPD60R145CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Family CoolMOS P7 (700V Superjunction) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V, ID 1.4 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Power Dissipation (Ptot) at Tc=25C 23 W —
工作接面溫度 -55C to +150C —
封裝 PG-TO252-3 (DPAK) TO-252AA (DPAK) surface mount
安裝類型 Surface Mount Surface Mount (DPAK, 3-pin + tab)
腳位數 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Technology Superjunction (CoolMOS P7) CoolMOS CFD7 (superjunction)
Avalanche Energy Rated Yes (100% avalanche tested) —
ESD Protection Integrated (per datasheet) —
RoHS 狀態 Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
工作溫度 — -55C to +150C (junction)
Series — CoolMOS CFD7
MSL 等級 — [DATA_NEEDED: MSL rating]
Target Application — ZVS / LLC resonant converters, soft switching

資料表與資源

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