IPD70R1K4P7SAUMA1 vs IPN70R1K4P7SATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD70R1K4P7SAUMA1 sa pamamagitan ng Infineon at IPN70R1K4P7SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ Nakahanda
Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD70R1K4P7SAUMA1 IPN70R1K4P7SATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Family CoolMOS P7 (700V Superjunction) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 700 V —
Continuous Drain Current (ID) at Tc=25C 4 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V, ID 1.4 ohm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical/min/max]
Total Power Dissipation (Ptot) at Tc=25C 23 W —
Temperature ng Junction na Operasyon -55C to +150C —
Packhaging PG-TO252-3 (DPAK) PG-SOT223 (3-pin + tab, surface mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Technology Superjunction (CoolMOS P7) Superjunction (CoolMOS P7)
Avalanche Energy Rated Yes (100% avalanche tested) —
ESD Protection Integrated (per datasheet) —
Tindminan RoHS Compliant Compliant
Product Series — CoolMOS P7
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 700 V
Continuous Drain Current (ID) at TC — 4 A
Static Drain-Source On-Resistance (RDS(on)) — 1.4 ohm class (per '1K4' suffix)
Total Power Dissipation (PD) at TC — 6.2 W
Hanay ng Temperature na Operasyon — -55C to +150C (TJ)
Configuration — Single with built-in diode
DPAK Footprint Compatible — Yes (drop-in alternative to DPAK per datasheet)
Level ng MSL — 1 (per JEDEC J-STD-020)

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