IPD80R600P7ATMA1 vs IPL60R180P6AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD80R600P7ATMA1 sa pamamagitan ng Infineon at IPL60R180P6AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPD80R600P7ATMA1 | IPL60R180P6AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 800 V | 600 V |
| Continuous Drain Current (ID, Tc) | 8 A | — |
| Pulsed Drain Current (IDM) | 22 A | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on), max) | 600 mΩ at VGS=10V | — |
| Maximum Power Dissipation (Ptot) | 60 W (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 3 V (typical) | 2.5 V to 3.5 V (typical 3.0 V) |
| Maximum Gate-Source Voltage (VGS) | ±30 V | — |
| Avalanche Energy, Single Pulse (EAS) | 20 mJ | — |
| Avalanche Energy, Repetitive (EAR) | 0.17 mJ | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-VSON-4 (Thin-PAK) surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | CoolMOS P7 super-junction | CoolMOS P6 (Superjunction N-channel MOSFET) |
| Polarity | N-Channel | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Gate-Source Voltage (VGS) | — | -20 V to +20 V (max) |
| Continuous Drain Current (ID) at Tc=25°C | — | 22.4 A |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | — | 180 mΩ |
| Power Dissipation (Ptot) at Tc=25°C | — | 176 W |
| Hanay ng Temperature ng Junction na Operasyon | — | -55 °C to +150 °C |
| Storage Temperature Range | — | -55 °C to +150 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC value] |
| MSL (Moisture Sensitivity Level) | — | MSL 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |