IPL60R085P7AUMA1 vs IPL60R105P7AUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R085P7AUMA1 sa pamamagitan ng Infineon at IPL60R105P7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL60R085P7AUMA1 IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 - 600V 85mΩ CoolMOS P7 MOSFET | Infineon

IPL60R085P7AUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL60R085P7AUMA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 39 A —
Continuous Drain Current (ID, Tc=100°C) 24 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) 85 mΩ at VGS=10 V —
Gate Threshold Voltage (VGS(th)) 3.5 V —
Maximum Power Dissipation (Ptot) 154 W —
Temperature ng Junction na Operasyon -40 °C to +150 °C —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
ESD Robustness (HBM) >2 kV (all pins) —
Technology CoolMOS P7 superjunction (7th generation) Superjunction (SJ) N-Channel Power MOSFET
Packhaging PG-VSON-4 (VSON-4, source-down) PG-VSON-4 (4-pin SMD with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Qualification JEDEC industrial —
Polarity N-channel —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Series — CoolMOS P7
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Hanay ng Temperature na Operasyon — -55C to +150C
Channel Type — N-Channel
Level ng MSL — [DATA_NEEDED: MSL rating]
Wala sa Halogen — Yes
Lead-Free — Yes

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