IPL60R105P7AUMA1 vs IPL60R065C7AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R105P7AUMA1 sa pamamagitan ng Infineon at IPL60R065C7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ NakahandaInfineon
IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon
IPL60R065C7AUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPL60R105P7AUMA1 | IPL60R065C7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS C7 |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55 °C to +150 °C (T_J) |
| Packhaging | PG-VSON-4 (4-pin SMD with exposed pad) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Tindminan RoHS | Compliant | Compliant with Exemption |
| Wala sa Halogen | Yes | — |
| Lead-Free | Yes | — |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Process Technology | — | CoolMOS C7 (Superjunction) |
| Maximum Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 29 A |
| On-Resistance (R_DS(on), typ., V_GS=10V) | — | 65 mΩ |
| Maximum Power Dissipation (P_D, T_C=25°C) | — | 180 W |
| Gate-Source Voltage (V_GS, max) | — | ±20 V |
| Gate-Source Threshold (V_GS(th), typ.) | — | 3.5 V |
| Packhaging / Kaso | — | PG-VSON-4-1 (Source-Down) |
| Automotive Qualified (AEC-Q101) | — | No |
| Total Gate Charge (Q_G, typ.) | — | [DATA_NEEDED: Q_G typ. value] |
| Output Capacitance Stored Energy (E_OSS) | — | [DATA_NEEDED: E_OSS typ. value] |